摘要
为考察具有Cu_7In_3相结构的Cu-In前驱膜对CuInS_2薄膜微结构的影响,采用电沉积法制备了Cu-In薄膜,并对制备态Cu-In薄膜在380℃进行真空退火处理制备Cu_7In_3前驱膜。采用硫化法对制备态Cu-In薄膜和Cu_7In_3薄膜进行硫化处理制备了CIS薄膜。结果表明,两种前驱膜经硫化处理均在表面生成Cu_xS偏析相,经KCN刻蚀处理发现以Cu_7In_3为前驱膜制备的CuInS_2薄膜高质量结晶,具有(112)择优取向,适合于制备CIS薄膜太阳能电池吸收层。
The influence of Cu-In precursors with Cu7In3 phase structure on the micro-structure of CuInS2 films was investigated. Cu-In precursors were synthesized via electrodepositing techniques. Cu7In3 films were prepared via annealing as-deposited Cu-In films in vacuum at 380℃. CuInS2 films were prepared by sulphurization of two types of Cu-In precursors. The results showed that there was a Cu.S secondary phase segregated on surface of the asgrown films. The CIS films with （112） preferred orientation were synthesized from Cu-In precursors containing the Cu7In3 phase. The Cu-In precursor with Cu7In3 phase is favorable for CuInS2 absorbers in solar cells.
出处
《物理测试》
CAS
2008年第2期1-4,共4页
Physics Examination and Testing
基金
"十一五"国家高技术研究开发计划(863计划)资助项目(2006AA03Z237)
