光电导开关中的隧穿现象

Tunneling Phenomenon in the Photoconductive Semiconductor Switch

采用光刻和大气环境下原子力显微镜(AFM)阳极诱导氧化加工相结合的加工方法,加工由Ti-TiOx-Ti纳米级隧道结构成其基本结构的微型光电导开关(PCSS),并对其电特性进行了研究和分析。研究结果表明在大气室温条件下,微型PC-SS的输出特性随氧化物宽度不同而不同,当宽度小于100nm时,其输出特性表现为在一个线性峰值的输出过后,又出现了一个非线性的峰值;在一定条件下Ti-TiOx-Ti纳米级隧道结存在隧穿效应,且其隧穿特性随绝缘金属氧化物的宽度不同而不同。

Photoconductive semiconductor switch （PCSS） and atomic force microscope （AFM） ＇s tip induced anodic is fabricated by combining lithography technique oxidation technique in air ambient. The nanometer scale Ti-TiOx-Ti tunneling junction forms the basic PCSS＇s structure. The electric characteristic of the PCSS is analyzed. The micro type PCSS＇s output characteristic varies with the width of the TiOx in air ambient and room temperature. When the width is narrower than 100 nm, the output curve appears another nonlinear peak after a normal linear one, and there is a tunneling phenomenon in the Ti-TiOx-Ti junction which has different tunneling characteristic with different TiOx width.