Ka波段硅基MEMS滤波器

Ka Band Silicon Based MEMS Filter

滤波器是微波毫米波电路中的一个重要部件,本文介绍了采用基片集成波导技术和ICP深刻蚀微机械通孔阵列的硅基MEMS滤波器。设计制作了MEMS滤波器的核心部件谐振器,测试结果显示该谐振器无载Q值大于180,频率误差控制在2%以内。以此为基础采用理论计算与实验设计相结合的方法设计了一个Ka波段硅基MEMS滤波器。滤波器中心频率为30.3GHz,插入损耗1.5dB,相对带宽5%。芯片尺寸为10.0mm×2.8mm×0.4mm。

Filter is a kind of important component in microwave and millimeter wave circuits and systems. A novel kind of filter is introduced. It is based on the substrate integrated waveguide （SIW） and MEMS technique. Induced coupling plasma （ICP） deep etching is done to get vertical via-holes in the high resistiv- ity silicon substrate. Measured results of a fabricated MEMS resonator which is the core component of the SIW filter show a high Q of 180 and a small error of 2% of the resonating frequency. To design a Ka band filter, theoretical calculation and experiment design method are used and described. The frequency of the filter is 30. 3 GHz; the insertion loss is 1.5 dB; and the band width is 5%. The final size of the chip is 10.0 mm×2. 8 mm×0. 4 mm.