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CMOS器件用金属栅材料的研究进展 被引量：1

Progress of Studies on Metal Gate Electrode in CMOS Device
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摘要 传统多晶硅栅已不能适应CMOS器件尺寸进一步减小的要求,因此需要金属栅极材料来取代多晶硅。本文综述了多晶硅栅极存在的问题;金属栅极材料性能的要求;新型金属栅材料的研究进展及热点。最后提出了金属栅极材料研究中需要进一步解决的问题。 Due to the downscaling of device dimensions in CMOS technology, the metal gate electrodes will be required to replace conventional poly-silicon gate. Problems of poly-silicon gate, requirements of metal materials as CMOS gate electrode and the latest development of novel metal gate electrodes are reviewed, and some problems to be solvod are pointed out.
作者 蔡苇 符春林 邓小玲 程文德
机构地区 重庆科技学院冶金与材料工程学院
出处 《金属功能材料》 CAS 2008年第3期43-48,共6页 Metallic Functional Materials
基金 重庆市教委科学技术研究项目(KJ071401) 重庆科技学院科技创新团队建设工程项目(CX06-9) 中国博士后科学基金(20070410774) 重庆市自然科学基金(CSTC2007BB4212)
关键词 金属栅 综述 多晶硅 性能 metal electrode, review, poly-silicon, performance
分类号 TB34 [一般工业技术—材料科学与工程]
  • 相关文献

参考文献41

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共引文献5

同被引文献32

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金属功能材料
2008年 第3期

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