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p^+多晶Si_(1-x)Ge_x功函数对异质结CMOS器件电学特性影响的模拟研究

Simulation Study of Effect of Work Function of p^+ Polycrystalline Si_(1-x)Ge_x on Electrical Properties of Heterojuncion CMOS
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摘要 为使垂直层叠SiGe/Si异质结CMOS器件具有匹配的阈值电压,利用二维器件模拟器MEDICI模拟分析了p+多晶Si1-xGex栅的功函数对此类器件直流与交流特性参数的影响,得出在P+多晶Si1-xGex功函数W=0.85eV,即Ge组分x=0.36时,此类器件的p-MOSFET与n-MOSFET具有匹配的阈值电压,分别为VTp=-0.215V和VTn=0.205V。为此类器件的优化设计和制备提供了理论依据。 To obtain the match threshold voltage of vertical stack SiGe/Si Heterojunction CMOS device, effects of work function of p^＋ polycrystalline Si1-xGex gate on electrical properties of this device are simulated and analyzed by two-dimensional device simulator MEDICI, the results show that when work function of p^＋ polycrystalline Si1-xGex ,W=0. 85 eV （x=0. 36）, the match threshold voltage of p-MOSFET and n-MOSFET can be obtained,and the threshold voltage of p-MOSFET and n-MOSFET are VTp=-0. 215 V and VTn=0. 205 V, respectively. Theoretical evidence is provided for the design optimization and fabrication of this kind of device.
作者 舒斌 张鹤鸣 王伟 宣荣喜 宋建军 任冬玲 吴铁峰 张永杰
机构地区 西安电子科技大学微电子学院
出处 《电子器件》 CAS 2008年第3期795-799,共5页 Chinese Journal of Electron Devices
基金 武器装备预研基金项目资助(51408061104DZ01)
关键词 异质结CMOS p^+多晶Si1-xGex栅 MEDICI模拟 功函数 Heterojunction CMOS p^＋ polycrystalline Si1-xGex gate MEDICI simulation work function
分类号 TN301.1 [电子电信—物理电子学]
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参考文献10

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电子器件
2008年 第3期

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