Pyrex玻璃的ICP刻蚀技术研究

Study on the ICP Etching Technology for Pyrex Glass

以SF6/Ar为刻蚀气体,采用感应耦合等离子体(ICP)刻蚀Pyrex玻璃,研究气体流量、射频功率对刻蚀速率及刻蚀面粗糙度的影响。采用正交实验方法找出优化的实验参数,得到Pyrex玻璃刻蚀速率为106.8nm/min,表面粗糙度为Ra=5.483nm,实验发现增加自偏压是提高刻蚀速率、减小刻蚀面粗糙度的有效方法。

Inductively Coupled Plasma Etching Technology of Pyrex glass etched by SF6/Ar. The important parameters ,such as the flow of SF6/Ar , ICP source power , substrate power that affect the etching rate and roughness of glass are analyzed. Perpendicular experimentation is used in the experiment. An etch rate of 106.8 nm/min With a surface roughness of 5. 483 nm is obtained. In the experiment,increasing self-bias voltage is an efficient method to improve the etching rate and surface roughness.