摘要
体硅MEMS和CMOS电路的单片集成技术是提高传感器性能的有效途径,但是集成技术会对陀螺的设计和CMOS电路的设计提出更高的要求。通过建立CMOS-MEMS体硅陀螺的等效电学模型,实现了对CMOS-MEMS体硅陀螺的系统级仿真。通过系统仿真,陀螺的结构部分、电路部分、集成产生的寄生效应以及工艺误差得到了有效的分析,从而能够了解它们相互之间的影响,更好的指导CMOS-MEMS体硅集成器件的设计。
CMOS-MEMS monolithic integration is a good way to improve the performance of MEMS sensors, but the integration technology requires more critical designs of the gyro and the signal conditioning circuits. A system level simulation of bulk micromachined CMOS-MEMS gyroscope was achieved by building an equivalent circuit model for the gyroscope. The structure of the gyroscope, the circuits, the parasitic effect and the manufacturing variations were analysed to understand the influences between each other. The simulation results can be used to improve the design of the integrated CMOS-MEMS sensors.
出处
《传感技术学报》
CAS
CSCD
北大核心
2008年第4期563-566,共4页
Chinese Journal of Sensors and Actuators
基金
自然科学基金资助(50575001)
关键词
陀螺电学模型
CMOS-MEMS体硅陀螺
工艺误差
系统仿真
equivalent circuit model of gyroscope
CMOS-MEMS bulk gyroscope
manufacturing variations
system level simulation