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用硫酸处理ITO表面改善有机发光二极管的发光效率

Improving the Efficiency of Organic Light-emitting Diodes Using Indium Tin Oxide Treated by H_2SO_4
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摘要 用硫酸溶液处理ITO表面制备了有机电致发光器件,发现随着溶液浓度和超声时间的不同,器件的效率也发生变化.当硫酸的浓度是98%且超声时间为10 min时,OLED具有最高的效率及较大的亮度,器件的效率提高了近4倍.通过扫描电镜对ITO表面形貌进行了对比分析,可以看到,经过处理的ITO玻璃表面的粗糙度明显降低,提高了有机膜的附着力,从而改善了器件的效率. We fabricated organic light-emitting diodes (OLEDs) with indium tin oxide anode treated by the H2SO4 solution. The efficiency of the OLEDs depended on the different concentration and ultrasonic time by the H2SO4 solution. When the concentration was 98% and the ultrasonic time was 10 min,the OLED exhibited the best efficiency and higher luminance than those of traditional devices. In particular, its efficiency can be increased by four times. Scanning electron microscopy measurements showed that those treated ITO anodes were much smoother which indicated that the adhesion between ITO and hole-transport layer was increased.Therefore, the efficiency of OLEDs was improved by the treatment of ITO anodes.
出处 《吉林师范大学学报(自然科学版)》 2008年第2期60-62,65,共4页 Journal of Jilin Normal University:Natural Science Edition
基金 吉林省科技发展计划(20050523)
关键词 OLED 硫酸 表面处理 ITO效率 OLED H2SO4 surface treating ITO efficiency
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  • 1闫金良.用于彩色滤光片的低阻低应力ITO透明导电膜[J].光学技术,2004,30(4):455-456. 被引量:2
  • 2占红明,饶海波,张化福.基于有机电致发光显示的透明导电膜ITO[J].液晶与显示,2004,19(5):386-390. 被引量:11
  • 3刘德武,朱文清,吴有智,蒋雪茵,张志林,许少鸿.高频放电处理ITO电极对有机电致发光器件性能的影响[J].上海大学学报(自然科学版),2004,10(6):551-554. 被引量:3
  • 4[1]Osada T,Kugler Th,Broms P,et al.Polymer-based light-emitting devices:investigations on the role of the indium-tin oxide (ITO) electrode[J].Synth.Met.,1998,96:77-80.
  • 5[3]Liu J M,Lu P Y,Weng W K.Studies on modifications of ITO surfaces in OLED devices by Taguchi methods[J].Material Science Engineering B,2001,85:209-211.
  • 6[4]Li F,Tang H.Effects of aquaregia treatment of indium-tin-oxide substrates on the beahavior of double layered organic light-emitting diodes[J].Appl.Phys.Lett.,1997,70(20):2 747-2 749.
  • 7[5]Fujita S,Sakamoto T,Ueda K,et al.Surface treatment of indium-tin-oxide substrate and its effects on initial nucleation process of diamine films[J].Jpn.J.Appl.Phys.,1997,36:350-353.
  • 8[6]Steuber S,Staudigel J,Stossel M,et al.Reduced operating voltage of organic electroluminescent devices by plasma treatment of the indium tin oxide anode[J].Appl.Phys.Lett.,1999,74(23):3 558-3 560.
  • 9[7]Kim J S,Friend R H,Cacialli F.Surface energy and polarity of treated indium-tin-oxide anodes for polymer light-emitting diodes studied by contact-angle measurements[J].J.Appl.Phys.,1999,86(5):2 774-2 778.
  • 10朱履冰.表面与界面物理[J].天津:天津大学出版社,1992,(172).

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