原子力显微镜结合拉曼光谱仪对不同氧分压制备ZnO薄膜性能研究

Study on characteristics of ZnO films deposition under various oxygen partial pressure using atomic force microscopy and Raman spectroscopy

利用磁控溅射技术,在硅基底上(100)成功制备了ZnO薄膜。分别利用原子力显微镜和拉曼光谱仪对其表面形貌、颗粒度、粗糙度和拉曼光谱性能进行表征、分析,两种方法所得结论基本吻合。研究结果表明,ZnO薄膜结晶度良好,颗粒分布均匀,具有良好的c轴取向。原子力显微镜表征结果表明,氧分压小于50%时,ZnO颗粒度和RMS粗糙度随通入氧气分压增加而减小:氧分压大于50%时,ZnO颗粒度和RMS粗糙度趋近于一常数。拉曼光谱表征结果表明,ZnO的拉曼特征峰E2(high)表现出尺寸效应,即随氧气增加(小于81.25%)ZnO颗粒度减小,使特征峰的峰位向高频移动,特征峰的半高宽增大;ZnO薄膜内部张力随氧气分压增加(小于81.25%)而减小。

High c - axis oriented ZnO films on Si （100） are deposited by radio- frequency reactive magnetron sputtering. There are several characteristics of ZnO films analysed and studied using atomic force microscopy （AFM） and Raman spectroscopy, such as topography, gains, RMS roughness and Raman spectroscopy. It is found that the results of atomic force microscopy are approximately same with that of Raman spectroscopy. Results of AFM are as following. With increasing the oxygen partial pressure from 8.75% to 50%, grains and RMS roughness of ZnO films decreased. When the oxygen partial pressure exceeds 50%, grains and RMS roughness of ZnO films is roughly a constant. Results of Raman spectroscopy are as following. With increasing the oxygen partial pressure from 8. 75% to 81.25%, Raman peak E2（ high ）moves to high frequency,FWHM of E2（high） increased and the tensility of ZnO films decreased.