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Al掺杂量对ZnO∶Al薄膜微观结构和光电性能的影响 被引量:3

Effect of Al Doping Concentration on the Structure,Electrical and Optical Properties of ZnO∶Al Films
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摘要 采用溶胶-凝胶法在玻璃基片上制备出不同Al掺杂量的ZnO:Al(ZAO)薄膜。系统研究了Al掺杂量对薄膜微结构和光电性能的影响。结果表明:溶胶-凝胶法制备的薄膜具有完好C轴择优取向,在可见光区的透射率均大于85%;随着Al掺杂量的增加,薄膜的平均颗粒尺寸减小,表面电阻率先降低后升高,薄膜的光学带隙宽变宽。在5%H_2+95%N_2气氛退火可显著降低薄膜电阻率,掺Al量为2%的薄膜具有最低电阻率5.5×10^(-3)Ω·cm。 Al-doped ZnO(ZAO) thin films with different doping concentrations are deposited on glass substrates using the sol-gel method. The effect of AI doping concentration on the microstructure, electrical and optical properties of the films is investigated. The results show that all the films prepared by the sol-gel method have high preferential C-axis orientation, and the transmittances with different AI doping concentrations are over 85 % within the visible wavelength region. With increasing the AI doping concentration, the average size of the film decreases, the electrical resistivity increases first,then decreases, and the optical band-gap energy broadens. The electrical resistivity decreases obviously by 5 % H2 + 95%N2 atmosphere annealing, and a minimum resistivity of 5.5×10^-3Ω·cm is obtained for the film doped with 2%Al.
出处 《材料导报(纳米与新材料专辑)》 EI 2008年第1期63-65,共3页
基金 湖南省自然科学基金(01JJY20575) 中南大学米塔尔创新项目(05M006)
关键词 溶胶凝胶 Al掺杂ZnO:Al 电阻率 带隙 sol-gel, AI doping, ZnO : Al, electrical resistivity, band-gap
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