摘要
ZnO薄膜的性质取决于不同的掺杂元素和不同的制备工艺。概述了掺杂ZnO薄膜的研究现状,分析了不同掺杂组分对ZnO薄膜的P型转变特性、发光特性以及铁磁性质的影响,认为稀土掺杂可能使ZnO薄膜产生新的发光特性,共掺杂技术可能是实现ZnO薄膜特性改变的新途径。
The properties of ZnO thin films depend on dopants. This article describes the progress in doped ZnO thin films, analyzes the influence of different dopants on the p-type doping property, photoluminescence and ferro- magnetic property of ZnO thin films, and puts forwards the properties of new photoluminescence can be produced from RE-doped ZnO thin films and the change of the properties of ZnO thin films can be realized by co-doping technology.
关键词
ZNO薄膜
P型掺杂
稀土掺杂
受激发光
稀磁半导体
ZnO thin films, p-type doping, RE-doping , stimulated radiation, diluted magnetic semiconductor
