摘要
分别采用溶胶-凝胶(Sol-gel)法和射频(RF)反应磁控溅射法在普通玻璃片上制备出ZnO薄膜,利用X射线衍射、扫描电子显微镜、分光光度计、台阶仪等检测手段分别对其进行了分析比较。结果表明:相同基底和退火温度下,RF磁控溅射法制备的ZnO薄膜具有更优异的晶化质量;在波长390～850nm范围内的透射率都在80%以上,薄膜的吸收长波限值分别约为375nm和390nm,计算出其禁带宽度分别为3.31eV和3.18eV。
ZnO thin films are prepared on glass substrates by Sol-gel method and reactive radio-frequency magnetron sputtering method respectively. X-ray diffraction（XRD）, scanning electron microscopy（SEM）, spectrophotometer,and surface profilometry are used to characterize their properties. The results indicate that on the same glass substrates, at the same annealed temperature, the films prepared by radio-frequency magnetron sputtering have more excellent crystallization quality. Both of the transmittances of ZnO films are over 80% when the wavelength is from 390 to 850nm. The limitation of the long wave absorption of ZnO thin film prepared by Sol-gel method is about 375nm, and that of ZnO thin film prepared by RF magnetron sputtering is about 390nm. The optical band gap energy calculated is 3. 31eV and 3. 18eV respectively.
