摘要
冗余金属填充改善了化学机械抛光对于金属和介质表面平坦化的均匀性,却大大地影响了互连线性能.提出一种性能优化的冗余金属填充算法,可减少对关键线网的时延影响.该算法利用扫描线算法找到填充区域,根据线网关键度将填充区域分类,按照优先级对填充数量进行分配,对每个填充区域采用解析式沙漏模型进行冗余金属插入.实验结果表明,该算法在减少冗余金属填充对关键线网的时延影响方面比传统的填充算法平均减少15%.
Dummy fill insertion for chemical mechanical polishing (CMP) enhances the planarization of wafer surface. However, it causes significantly varying impact on the circuit performance. A performance aware dummy fill insertion algorithm for reducing the coupling effects on critical nets is presented. First, sweep line algorithm is used to find fill regions of each tile on the layout. Secondly, the fill regions are classified according to the criticality of the surrounding net segments. Then the fill amount of each fill region is reassigned based on its class. Finally, analytical hourglass-shape fill patterns are inserted in each fill region. Experimental results show that the proposed algorithm can reduce the delay of net by 15% on average than the traditional algorithm.
出处
《计算机辅助设计与图形学学报》
EI
CSCD
北大核心
2008年第6期724-729,共6页
Journal of Computer-Aided Design & Computer Graphics
基金
国家自然科学基金(60776026)
关键词
VLSI
化学机械抛光
冗余金属填充
性能优化
关键线网
VLSI
chemical mechanical polishing dummy fill insertion performance optimization critical net