单轴各向异性左手材料薄层的Goos-Hnchen位移

The Goos-Hnchen shift of uniaxially anisotropic left-handed material film

左手材料是近几年兴起的一种新型人工材料,现有的左手材料大多数是各向异性的.因此对各向异性左手材料的研究非常重要.对光轴与界面成任意角度的单轴各向异性左手材料薄层的Goos-Hnchen(GH)位移进行了研究.分别对入射波全反射和部分反射情形进行了研究,得到了GH位移的表达式.分析了入射角和光轴与界面的夹角对GH位移的影响,并对这两种情况下GH位移的符号进行了分析.研究发现,部分反射时反射波的GH位移与透射波的相等;薄层厚度逐渐增加时,透射波的GH位移振荡且呈整体增加,在透射共振点达到绝对极大值,它受入射角和光轴与界面的夹角的巨大影响.

Artificial left-handed materials are a recent state-of-the-art development. Existing left-handed materials are almost all optically anisotropic, so an investigation of the anisotropic properties of these materials has become essential. This paper studies the Goos-Hānchen shift on the surface of a uniaxially ani-sotropic film of left-handed material whose optical axis forms an arbitrary angle with the incident surface of the material. The formulae of the Goos-Hānchen shifts were derived for both total reflection and partial reflection. The influences of the incident angle and the included angle between the optical axis and the inter-face on the Goos-Hānchen shift were analyzed. The signs of the Goos-Hānchen shifts in these two situations are discussed. It is found that the Goos-Hānchen shift of the reflected wave in partial reflection is identical to that of the transmitted one. The Goos-Hānchen shift of the transmitted wave oscillates as the thickness of the film increases, tending to increase gradually. The Goos-Hānchen shift of the transmitted wave reaches its absolute maximum when the transmitted wave resonance. The Goos-Hānchen shift of the transmitted wave is significantly influenced by the incident angle and the angle between the optical axis and the interface.