摘要
本文采用三甲基镓(TMG)和砷烷(AsH_3)作为源气体,用金属有机物化学气相淀积(MOCVD)在常压600～750°的温度范围内进行了GaAs薄膜的生长。研究了源气体流量和衬底温度对生长速率的影响。用扫描电子显微镜(SEM)、电子能谱和Vanderauw法测量表明,这套系统生长的GaAs薄膜具有很高的质量。
The IIIN semiconductor GaAs film has been grown by metalorganic chemical vapor deposition(MOCVD) from the reactants of trimethlgallium(TMG) and arisine(AsH3) at atmospheric pressure in the range 600-750 ° . Substrate temperature and gas flow rate of reactants were investigated with regard to their effect on growth rate. The samples, which were measured by electron energy specturm, scanning electron microscope(SEM) and Van der Pauw method, shows that a high quality film was successully fabricated using this growth system.
出处
《河北大学学报（自然科学版）》
CAS
1990年第3期50-54,共5页
Journal of Hebei University(Natural Science Edition)
