摘要
通过红外透射谱、拉曼散射谱和X射线衍射谱的测量,研究了反应溅射制备的氢化非晶硅碳膜(SP-a-SiC:H)高温退人处理后的结构变化。发现在等时退火的情况下,退火温度对薄膜结构影响明显,H原子的逸出温度与键合有关,H从CHn中逸出要比从SiHn键中追出需要更高的温度,样品经800℃退火后。
Using infrared transimissing, airman scattering, and X-ray diffraction spectroscopy, the authors investigated the effect of annealing temperature on the structure of amorphous hydrogenatedsilicon carbide (a-SiC:H) films prepared by the reactive sputtering method. It is found that annealing at temperature up to 800℃ results in evacuation of hydrogen atoms. Moreover, the annealingtemperature corresponding to the evacuation of H atom from CH. bonds is higher than thatof R evacuation from SiH. bonds. The annealing produces structural rearrangements, and theamorphous phase begins to transform into the microcrystalline phase at approxdriate 800℃.
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
1997年第3期351-355,共5页
Journal of Inorganic Materials
基金
甘肃省自然科学基金!ZR-93-0179
关键词
高温退火
溅射
薄膜
碳化硅
氢化
半导体薄膜
high-temperature annealing, reactive-sputtering, a-SiC:H flms, structural rearrangement