用正电子研究原生ZnO单晶中的缺陷

Defects Studies of As-Grown Single Crystal ZnO by Positron

利用正电子寿命谱和多普勒展宽谱技术研究了原生ZnO的缺陷结构及其退火效应.经900℃退火之后,正电子寿命实验显示样品中的空位型缺陷基本被消除,其体寿命为180 ps.通过比较原生和退火样品的符合多普勒展宽谱的商谱曲线,两者有相似的峰型,结合寿命谱的相关数据表明原生ZnO中不存在H原子填充Zn空位.

Positron lifetime spectroscopy （PAS） and coincident Doppler broadening （CDB） measurements have been performed in as grown and annealing single crystal ZnO. The temperature dependence ob- served in annealed ZnO indicates that the defect is removed after annealing. By combining the Doppler broadening measurements,we inferred that there isn＇t hydrogen filling the zinc vacancy site in the asgrown ZnO due to the same characteristics in CDB spectra for as-grown and annealed ZnO samples.