KDP晶体生长工艺研究

Research on Procedure of KDP Crystal Growth

利用水溶法生长了KDP单晶体,系统论述了晶体生长装置和工艺各个过程.指出生长均匀、无缺陷KDP单晶体工艺过程中的注意的事项.实验表明晶体生长过程中溶液的纯度不高,会造成籽晶以外的溶液体系其他部位大量成核;pH值过高,生长的晶体会出现楔化现象,过低则影响生长速率,实验测得pH值为2.2;50℃的晶体退火温度能有效消除晶体内部的热应力,提高晶体的光学均匀性.同时籽晶的切向、温度控制的准确性等因素有效避免晶体生长过程中出现的生长层、晶面花纹等缺陷.

Water dissolution method is adopted to grow single crystal KDP. Through the discussion of the e-quipment and every technical process, the causes for the deficiencies are analyzed. It is shown through the resuits that 1. The purity of solution influences the process of crystal growth, low purity resulting in nucleation of troubled - water out of the seed. 2. Suited pH is another important factor in crystal growth, higher pH inducing taper formation, and lower pH influencing rate of crystal growth. The value in the experiment is 2.2. 3. Appropriate annealing temperature （50 ℃ in the experiment） can eliminate heat stress as well as improve optical uniformity of KDP crystal. The accurate temperature can avoid the deficiency of growth layer and crystal stripe.