摘要
将纳米碳化硅粉体材料掺进PAA中,合成碳化硅SiC/PAA,经加热固化制成固体复合材料;利用不同型号的阻抗分析仪表征性能,分析测试,比较介电常数,其最低可达ε=2.0,平均值达ε=2.2,比基体聚酰亚胺(介电常数为3.4)及传统的的低介电材料二氧化硅(介电常数为4.0)显著降低。
The solid SiC/PAA composite was fabricated by mixing nano silicon carbide into PAA, followed by heat-curing. The properties was characterized and analyzed by different model impedance analyzer. The lowest permittivity （ε）and the average value can reach up to 2.0 and 2.2 respectively, which decreases significantly in comparison with polyimide （ε= 3. 4） and the conventional low dielectrical silicon dioxide （ε= 4.0）
出处
《铸造技术》
CAS
北大核心
2008年第6期807-809,共3页
Foundry Technology
基金
国家自然科学基金资助项目(0447005)
关键词
低介电常数
测试分析
纳米碳化硅
Low dielectrical constant
Test and measurements
Nano silicon carbide
