多晶硅薄膜晶体管泄漏电流建模研究与进展

Research and Development of Leakage Current Modeling for Polycrystalline Silicon Transistors

泄漏电流是多晶硅薄膜晶体管应用的一个主要问题。多晶硅薄膜晶体管泄漏电流的建模对集成多晶硅薄膜晶体管设计和工艺改进具有重要意义。总结了多晶硅薄膜晶体管泄漏电流建模思想,并对三种基于不同物理机制的典型模型进行了评述,分析讨论了其优缺点;最后,对当前建模工作进行了总结与展望。

Leakage current is a major problem in application of polycrystalline silicon transistors （p-Si TFT）, so modeling of leakage current in p-Si TFT＇ s is important for designers and process engineers. Three typical models based on different physical mechanisms were reviewed, and their advantages and disadvantages were analyzed. Finally, present works on leakage current modeling were discussed.