摘要
综合分析了压控振荡器设计的参数对指标、性能的影响;根据分析结果,实现了一个工作在700~900MHz的低功耗压控振荡器。该压控振荡器采用UMC0.18μm CMOS工艺实现,三位粗调电容。测试结果表明,该压控振荡器输出频率780~930MHz,VCO相位噪声为-103dBc/1MHz,芯片面积为700μm×600μm,功耗仅为6.1mW。
Influence of design parameters on the performance of LCVCO was analyzed. Based on the analysis, an LCVCO was implemented using UMC's 0. 18 μm CMOS process. Test results showed that the circuit had an output frequency from 780 MHz to 930 MHz, and a phase noise of-103 dBc/1 MHz. The VCO occupied a chip area of 700 μm × 600 μm, and it consumed only 6. 1 mW of power.
出处
《微电子学》
CAS
CSCD
北大核心
2008年第3期407-410,共4页
Microelectronics
关键词
压控振荡器
射频
相位噪声
MOSFET
Voltage-controlled oscillator
Radio frequency
Phase noise
MOSFET