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2.5GHz低相位噪声LC压控振荡器 被引量:4

A 2.5 GHz LC Voltage Controlled Oscillator with Low Phase Noise
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摘要 在0.35μm SiGe BiCMOS工艺条件下,设计了一个全集成的低相位噪声LC压控振荡器(VCO)。该VCO采用尾电阻结构替代传统的尾电流源结构实现电流控制,以减小尾电流源产生的噪声。该VCO的调谐范围为480MHz,可以覆盖2.32~2.8GHz。当振荡频率为2.5GHz时,100kHz和1MHz频偏处的相位噪声分别为-104.3dBc/Hz和-124.3 dBc/Hz。振荡器工作电压为5V,尾电流为5mA。工作在2.5GHz时,其100kHz频偏处的性能系数为-178dBc/Hz。 A fully integrated LC voltage controlled oscillator (VCO) with low phase noise was designed using 0. 35 tan SiGe BiCMOS technology. In this VCO, instead of conventional tail current source, tail resistor structure was used for current control to reduce noise of tail current source. The VCO has a tuning range of 480 MHz, which is from 2. 32 GHz to 2. 8 GHz, and achieves low phase noise of -104. 3 dBc/Hz and -124. 3 dBc/Hz at 100 kHz and 1 MHz offset frequency from 2. 5 GHz carrier. The oscillator draws 5 mA from 5 V supply voltage. The figure-ofmerit (FOM) value at 2. 5 GHz is around -178 dBc/Hz at the offset frequency of 100 kHz.
作者 韩斌 吴建辉
出处 《微电子学》 CAS CSCD 北大核心 2008年第3期424-427,共4页 Microelectronics
关键词 压控振荡器 SIGE BICMOS Voltage controlled oscillator SiGe BiCMOS
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  • 1RAZAVI B. RF Microelectronics [M].Upper Saddle River, NJ: Prentice Hall PTR. 19981 206-243.
  • 2HAJIMIRI A, LEE T H. The design of low noise oscillators [M]. Kluwer Academic Publishers. 1999: 111-127.
  • 3KOC B, KOUKAB A, DUNDAR G. Phase noise in bipolar and CMOS VCOs - an analytical comparison [C]// IEEE Int Syrup Circ and Syst. Kos Island, Greece. 2006: 5688-5691.
  • 4JACOBSSON H, GEVORGIAN S, MOKHTARI M. Low-phase-noise low-power IC VCOs for 5-8 GHz wireless applications[J]. IEEE Trans Microw Theo and Tech, 2000, 48(12): 2533-2539.
  • 5HEGAZI E, SJOLAND H, ABIDI A A. A filtering technique to lower LC oscillator phase noise[J]. IEEE J Sol Sta Circ, 2001, 36(12): 1921-1930.
  • 6HEGAZI E, SJOLAND H, ABIDI A A. A filtering technique to lower LC oscillator phase noise[J]. IEEE J Sol Sta Circ, 2001, 36(12): 1921-1930.
  • 7ZHU Z-P, DAVIS W A, SINHA K, et al. An optimization procedure in low-phase-noise integrated LC oscillators design [C] // IEEE MWSCAS. Cincinnati, Ohio, USA. 2005: 519-522.
  • 8JERNG A, SODINI C G. The impact of device type and sizing on phase noise mechanisms [J]. IEEE J Sol Sta Circ. 2005, 40(2): 360-369.

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