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低压低功耗电流模CMOS带隙基准电路 被引量:6

Low-Voltage/Low-Power Current Mode CMOS Bandgap Reference Circuit
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摘要 提出了一种解决电流模带隙基准电路的第三简并态问题的处理方法,设计了一个完整的低压低功耗带隙电路。通过在电路启动时关断导致产生第三简并态的电流通道并监测电路关键节点电压的方法,控制电路的启动过程,使电路在启动时避开第三简并态,进入正常工作状态。HSPICE仿真结果显示,该电路的输出基准电压为793.6mV,温度漂移系数可低达10ppm/℃,电源电压大于1V即可正常工作;在电源电压为1.5V时,功耗小于5μW。 A solution to third-equilibrium state problem in current-mode bandgap reference voltage circuit was presented, and a low-voltage/low-power bandgap reference IC was designed. In this circuit, the start-up process was controlled by shutting off sub-circuits leading to the third-equilibrium state and detecting voltages at the key node when the circuit was starting up, which could conduct the circuit into the normal operation state, instead of the third equilibrium state HSPICE simulation results showed that the bandgap reference circuit had an output voltage of 795 mV and a temperature coefficient as low as 10 ppm/℃, and it dissipated less than 5μW of power at 1.5 V supply.
出处 《微电子学》 CAS CSCD 北大核心 2008年第3期449-452,456,共5页 Microelectronics
关键词 电流模 带隙基准源 第三简并态 电源抑制比 温度系数 Current mode Bandgap reference source Third-equilibrium state PSRR Temperature coefficient
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参考文献7

  • 1孙顺根,吴晓波,王旃,冀学美,严晓浪.一种高精度CMOS能隙基准电压源[J].微电子学,2003,33(2):157-159. 被引量:8
  • 2BANBA H, SH1GA H, UMEZAWA A, et al. A CMOS bandgap reference circuit with sub-1-V operation [J].IEEE J Sol Sta Circ, 1999, 34(5): 670-674.
  • 3BONI A. Op-amps and startup circuits for CMOS bandgap references with near 1-V supply [J]. IEEE J Sol Sta Circ, 2002, 37(10). 1339-1343.
  • 4KENNEDY G, RINNE K. A programmable bandgap voltage reference [C]//Proc IEEE Instrum and Meas Technol Conf. Ontario, Canada. 2005: 501-506.
  • 5KER M D, CHEN J S. New curvature-compensation technique for CMOS bandgap voltage reference with sub-1 V operation[J]. IEEE J Cire and Syst Ⅱ: Express Briefs, 2006, 53(8):667-671.
  • 6许长喜.低压低功耗CMOS带隙电压基准及启动电路设计[J].Journal of Semiconductors,2005,26(10):2022-2027. 被引量:5
  • 7王磊 邢建力.高抑制比的低电压带隙基准设计.EDN电源技术,2007,(5):13-16.

二级参考文献13

  • 1Song B S, Gray P R. A precision curvature compensated CMOS bandgap reference [J]. IEEE J Sol Sta Circ, 1983; 18(6): 634-643.
  • 2Chin S-Y,Wu C-Y. A new type of curvature- compensated CMOS bandgap voltage reference [J]. VLSI TSA, 1991; 398-402.
  • 3Tham K M, Nagaraj K. A low supply voltage high PSRR voltage reference in CMOS process [J]. IEEE J Sol Sta Circ,1995; 30(5): 586-590.
  • 4Dehghani R,Atarodi S M.A new low voltage precision cmos current reference with no external components.IEEE J SolidState Circuits,2003,50(12):928.
  • 5Yu Quan,Chan E.Bandgap reference circuit for improved start-up.US Patent 6,710,641,Mar,23,2004.
  • 6Green M M,Wison A N.How to identify unstable dc operating points.IEEE Trans Circuit Syst,1992,39(10):820.
  • 7.[EB/OL].www.vabo.cz/stranky/biolek/veda/articles/MIXDES00.pdf,.
  • 8Gray P R,Meyer R G.Analysis and design of analog integrated circuits.Fourth edition.John Wiley & sons,Inc,2001.
  • 9Banba H,Shiga H,Umezawa A,et al.A CMOS bandgap reference circuit with sub-1-V operation.IEEE J Solid-state Ciruits,1999,34:670.
  • 10Malcovati P,Maloberti F,Fiocchi C,et al.Curvature-compensated BiCMOS bandgap with 1-Ⅴ supply voltage.IEEE J Solid-State Circuits,2001,36:1076.

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