PbI2掺杂对高温高压合成PbTe1．04合金电学性质的影响

Effects of PbI_2 doping on the electrical transport properties of PbTe_(1.04) prepared by HPHT

通过高温高压方法,成功地合成出了立方相(PbTe1.04)100-y(PbI2)y(0≤y≤0.065)体热电材料。在常温常压下,对样品的一系列电学性质进行了测试与研究。结果表明,随着掺杂量的增加,Seebeck系数的绝对值和电阻率均显著地减小。当y=0.015时,热电材料的功率因子达到最大值24.2μW/(cm.K2),它远远大于常压下合成PbTe掺杂PbI2的功率因子。以上结果说明,高温高压结合微量掺杂的方法可以有效地提高PbTe材料的电学输运性能。

Cubic （PbTe1.04）100-y（PbI2）y（0≤y≤0. 065） bulk thermoelectric （TE） materials with enhanced power factor were prepared by high-pressure and high-temperature （HPHT） method. The dependence of electrical transport properties on composition was studied at room temperature. With an increase of PbI2, the Seebeek coefficient in absolute value and the electrical resistivity firstly increase slightly and then decrease dramatically. The maximum power factor reaches 24.2μW/（cm · K^2） at y=0. 015, which is much higher than that reported previously for the PbTe doped with PbI2 prepared at normal pressure. The results indicate that HPHT combined with trace quantity doping is an effective method to enhance the thermoelectric properties for PbTe.