摘要
报道了研制的SiC衬底AlGaN/GaN HEMT微带结构微波功率MMIC,芯片工艺采用凹槽栅场板结构提高AlGaN/GaN HEMTs的微波功率特性.S参数测试结果表明AlGaN/GaN HEMTs的频率特性随器件的工作电压变化显著.研制的该2级功率MMIC在9～11GHz带内30V工作,输出功率大于10W,功率增益大于12dB,带内峰值输出功率达到14.7W,功率增益为13.7dB,功率附加效率为23%,该芯片尺寸仅为2.0mm×1.1mm.与已发表的X波段AlGaN/GaN HEMT功率MMIC研制结果相比,本项工作在单位毫米栅宽输出功率和芯片单位面积输出功率方面具有优势.
The development of an AIGaN/GaN HEMT power MMIC on SI-SiC designed in microstrip technology is pres- ented. A recessed-gate and a field-plate are used in the device processing to improve the performance of the AIGaN/GaN HEMTs. S-parameter measurements show that the frequency performance of the AIGaN/GaN HEMTs depends significantly on the operating voltage. Higher operating voltage is a key to higher power gain for the AIGaN/GaN HEMTs. The developed 2-stage power MMIC delivers an output power of more than 10W with over 12dB power gain across the band of 9-11GHz at a drain bias of 30V. Peak output power inside the band reaches 14.7W with a power gain of 13.7dB and a PAE of 23%. The MMIC chip size is only 2.0mm × 1. 1mm. This work shows superiority over previously reported X-band AIGaN/GaN HEMT power MMICs in output power per millimeter gate width and output power per unit chip size.
