摘要
在不同功率密度下用甚高频化学气相沉积(VHF-PECVD)法制备了一系列微晶硅(μc-Si:H)薄膜,并对薄膜的微观结构进行了研究.重点研究了在较低的功率密度下,功率密度的改变对薄膜沉积速率和结晶状况的影响.结果表明,随着功率密度的提高,沉积速率逐渐加大,进一步提高功率密度时,沉积速率趋于饱和;与此同时,薄膜的孵化层厚度和形核密度随功率密度而变化.
μc-Si：H films were deposited under different power density by VHF-PECVD. The microstructure of the films was investigated. The effect of power density on the deposition rate and crystallization of μc-Si：H was studied extensively. This study shows that as the power density increased, the deposition rate first increased gradually and then saturated. The thickness of the incubation layer and the nucleation density varied with power density.
基金
国家重点基础研究发展计划资助项目(批准号:2006CB202601)~~
