摘要
本文利用特殊设计的石墨舟,作了GaAs开管Zn扩散实验,获得了质量较好的扩散片,取得了一系列实验结果,从而确定出最佳扩散条件.对不同扩散条件下的扩散片进行了SIMS测试,得到了Zn浓度反常分布曲线,提出一种新的扩散模型,对反常分布曲线给予了合理的解释.
By means of the specially designed graphite boat,the Zn-diffusion experiment. in GaAs open tube has been carried out,and a series of experimental results and the diffusion chips with good guality were obtained.Thus,the optimum conditions of diffusion were also determined.An unusual distributiori curve of Zn concentration,being gained through the SIMS measurement of diffusion chips under different diffusion conditions has been obtained and proposed a new diffusion model to give a reasonable explanation for the unusual distrib- ution curve.
出处
《河北工学院学报》
1990年第4期35-41,共7页
Journal of Hubei Polytechnic University
关键词
半导体器件
砷化镓
开管扩散
锌
Open tdde diffusion
Zn-Concetration
Diffusion model
SIMS
Optimal diffision condition
Diffusion chip
Unusual distribution
Graphite boat