直流PCVD方法制备α-Si:D/H薄膜

a-Si:D/H THIN FILMS PRODUCED BY DERECT CURRENT PCVD METHOD

将 Ar(95%)-SiH_4(2.5%)-D_2(2.5%)混合气体在等离子体直流正辉区用化学气相沉淀(PCVD))方法制备 a-Si:D/H 薄膜.采用双探针技术测量了混合气体等离子体参数,红外照相方法测量了反应腔壁温度.结果表明,基片支架对反应腔的等离子体有干扰,反应腔壁温度分布不均匀;基片温度高的区域薄膜沉淀速率大;加大电源功率可提高薄膜沉淀速率.

Deuterated amorphous silicon thin films(a-Si:D/H)were produced in Ar(95%)-SiH_4 (2.5%)-D_2(2.5%)mixture gas plasma by employing DC positive column plasma CVD techniques. Twin probe electric field measurement was used to determine the plasma parameters.The reaction chamber wall temperature was measured by an infrared(IR)image camera.The results show that the plasma is disturbed by the existence of a glass boot,the wall temperature of reaction chamber is non- uniform;the higher the substrate temperature,the larger the deposition rate,and increasing the deposition power will enhanec the deposition of the film as well.