新型多晶硅压力传感器

A NOVEL POLYSILICON PRESSURE SENSOR

论述了一种新型多晶硅压力传感器．它采用矩形双岛硅膜结构，多晶硅作应变电阻，二氧化硅介质膜作隔离，用集成电路工艺和微机械加工技术制作．因而，传感器具有灵敏度高和工作温度高等特点．利用有限元法对双岛结构的应力分布进行了模拟计算，实验结果与理论分析一致．

The paper presents a novel polysilicon pressure sensor which has used the rectangle twin isles structure of silicon diaphragm. The sensor makes polysilicon as the piezoresistors isolated by SiO 2 film. The sensor is fabricated with integrated circuit process and micromachining technolog. The novel sensor has high sensitivity and elevated operation temperature. The stress distribution of the twin isles structure has been calculted by computer with the finite element method, that has indicated the experimental results agree with the theory analises.