期刊文献+

退火温度对冷静液挤压铜包铝线材组织和力学性能的影响 被引量:10

EFFECTS OF ANNEALING TEMPERATURE ON THE MICROSTRUCTURES AND PROPERTIES OF COPPER CLADDING ALUMINUM WIRE PREPARED BY COLD HYDROSTATIC EXTRUSION
下载PDF
导出
摘要 研究了退火温度对冷静液挤压铜包铝线材组织和性能的影响规律,在界面断裂形式分析的基础上探讨了其作用机理,结果表明:直径为6 mm的冷静液挤压态铜包铝线材合理的退火温度为350℃,低于200℃退火时,纯Cu包覆层只发生回复,复合线材的力学性能得以部分恢复;350℃退火时,铜层再结晶基本完成;复合线材的抗拉强度降到最低,延伸率则达到最高;400℃退火时,铜层晶粒开始长大,复合线材的延伸率开始劣化,界面结合强度随温度的变化呈先增加后降低的趋势,而界面的断裂则由低温退火时的铝基体塑性断裂转变为高温退火后Cu/Al界面的脆性断裂。 The effects of annealing temperature on the microstructure and mechanical property of copper cladding aluminum wires fabricated by cold hydrostatic extrusion were investigated, and its influence mechanism was discussed on the basis of different interface fracture modes. The experimental results showed that the appropriate annealing temperature is 350 ℃ for as-extruded wires with 6 mm in diameter. As the annealing temperature is below 200 ℃, a recovery process appeared in copper sheath and the mechanical properties of the cladding partly recovered. The recrystallization of copper proceeded sufficiently at 350℃, the tensile strength and elongation of the cladding wire reached minimum and maximum, respectively. The growth of copper grains occurred during annealing at 400 ℃, which decreased obviously the elongation of the wire. With the increase in annealing tem- perature, the interface strength of the Cu/Al bimetal wire increased to a maximum value and then decreased, the interface fracture location transformed from Al side to the Cu/Al interface and the fracture mode transformed from ductile to brittle.
出处 《金属学报》 SCIE EI CAS CSCD 北大核心 2008年第6期675-680,共6页 Acta Metallurgica Sinica
基金 国家重点基础研究发展计划项目2006CB605200 国家自然科学基金项目50674008 新世纪优秀人才支持计划项目NCET-06-0083资助
关键词 静液挤压 铜包铝线材 退火温度 显微组织 力学性能 hydrostatic extrusion, copper cladding aluminum wire, annealing temperature, microstructure, mechanical property
  • 相关文献

参考文献16

  • 1Kang C G, Jung Y J, Kwon H C. J Mater Process Technol, 2002; 124:49
  • 2Xu R C, Tang D, Ren X P, Wang X H, Wen Y H. Rare Met, 2007; 26:230
  • 3Braunovic M, Aleksandrov N. Proc 38th IEEE Holm Conf of Electrical Contacts, Philadelphia, USA, 18-21 Oct., 1992:25
  • 4Chen S D, Ke F J, Zhou M, Bai Y L. Acta Mater, 2007; 55:3169
  • 5Lee W B, Bang K S, Jung S B. J Alloys Compd, 2005; 390:212
  • 6Lee J E, Bae D H, Chung W S, Kim K H, Cho Y R. J Mater Process Technol, 2007; 187-188:546
  • 7Heness G, Wuhrer R, Yeung W Y. Mater Sci Eng A, Available Online at www.sciencedirect.com, 16 May, 2007, in Press
  • 8Moreno D, Garrett J, Embury J D. Intermetallics, 1999; 7:1001
  • 9Hang C J, Wang C Q, Mayer M, Tian Y H, Zhou Y, Wang H H. Microelectron Reliab, 2008; 48:416
  • 10Chen C Y, Chen H L, Hwang W S. Mater Trans, 2006; 47:1232

同被引文献101

引证文献10

二级引证文献42

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部