摘要
采用溶液添加法在中压压敏电阻中引入金属K+离子,研究不同含量的K+对ZnO压敏电阻电性能的影响及其机理,结果表明:K+能增强ZnO压敏电阻的稳定性,富集在晶界处的K+因补充了晶界处正点中心的数量,使耐受8/20μs峰值电流冲击性能提高;K2O的高温液相烧结促使瓷体的气泡等烧结缺陷减少,使其2ms方波脉冲冲击性能提高;随着K掺入量的增加和烧结时间的延长,晶粒尺寸增大,压敏电压梯度减小。
The metal iron K^＋ was introduced in MV ZnO varistor via solution process. The effect of various amount of K^＋ doping on varistor properties and its mechanism was studied. Result shows that K^＋ increased stability of ZnO varistor, K^＋ gathered near crystal boundary can enhance 8 / 20 μs surge current withstand capacity owning to increase the number of positive kerns at crystal boundaries. The high temperature liquid phase of K20 decreases the bubbles in ceramic body and enhances the 2ms long duration rectangular surge withstand capacity. Along with increase of K content and elongation of sintering duration the crystal size increases and reduces the voltage gradient of varistor.
出处
《电瓷避雷器》
CAS
2008年第3期17-21,共5页
Insulators and Surge Arresters
