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应变SiGe沟道PMOSFET阈值电压模型 被引量：1

Threshold Voltage Model for Strained SiGe Channel PMOSFET
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摘要 首先建立了应变SiGe沟道PMOSFET的一维阈值电压模型,在此基础上,通过考虑沟道横向电场的影响,将其扩展到适用于短沟道的准二维阈值电压模型,与二维数值模拟结果呈现出好的符合。利用此模型,模拟分析了各结构参数对器件阈值电压的影响,并简要讨论了无Sicap层器件的阈值电压。 The 1-D threshold voltage model of strained SiGe channel PMOSFET is proposed first. Then based on the 1-D model, a quasi-2-D threshold voltage model for short-channel devices is built by considering the lateral electric field in channel. The simulation results match well with 2-D numerical simulated results. Using this model, influences of various structure parameters on threshold voltage of the devices are simulated and analyzed, and also threshold voltage of devices without Si cap layer is discussed.
作者 徐静平 苏绍斌 邹晓
机构地区 华中科技大学电子科学与技术系
出处 《固体电子学研究与进展》 CAS CSCD 北大核心 2008年第2期180-184,234,共6页 Research & Progress of SSE
基金 国家自然科学基金资助项目(60776016)
关键词 应变硅锗 金属-氧化物-半导体场效应晶体管 阈值电压 准二维模型 strained SiGe PMOSFET threshold voltage quasi-2-D model
分类号 TN432 [电子电信—微电子学与固体电子学]
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参考文献11

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同被引文献14

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  • 8ZHANG J C,JIANG Y L.Investigation of Ni(Pt)/Si-cap/Si Ge solid phase reaction[C]//Proceedings of IEEE International Workshop on Junction Technology.Shanghai,China,2014:1-4.
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  • 10HESSE A,STANGL J,HOLY V,et al.Influence of capping on strain,composition and shape of Si Ge islands[J].Materials Science and Engineering:B,2003,101:71-76.

引证文献1

固体电子学研究与进展
2008年 第2期

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