0.6m CMOS过温保护电路设计

Design of a Thermal-shutdown Circuit Using 0.6 μm CMOS Technology

采用CSMC5V0.6μm标准CMOS工艺设计研制了一种过温保护电路。该电路由三部分构成:PTAT(与热力学温度成正比)电压产生电路,带隙基准源电路和比较器电路。芯片测试结果表明在30～130℃温度范围内PTAT输出电压线性度良好(最大偏差小于1.6%),灵敏度约为10mV/℃;关断温度可由外接电阻设定,85℃以下实测值与设定值偏差小于5℃,85℃以上偏差稍大约为10℃。该过温保护芯片电路结构简单、面积小、功耗低,且具有良好的移植性,可广泛应用于LED照明驱动电路,电源管理芯片等场合,也可用于和MOS功率器件混合封装组成带过温保护的功率器件模块。

A thermal-shutdown circuit is designed and fabricated using 0.6μm standard CMOS process from CSMC. It is composed of PTAT module, reference module and comparator module. PTAT output voltage is defined as proportional to the thermodynamic temperature. Experimental results yield an output PTAT voltage sensitivity 10 mV/℃ and good linearity （maximum dispersancy is 1.6%） over the range of 30-130℃. Shutdown temperature can be set by an exterior resistor and under 85℃ the gap between simulation and experimental result is less than 5℃ while up to 10℃ over 85℃. Simple structure, low dispassion and small chip area make it excellent. It is easy to transplant and can be applied to many fields such as LED illuminance drive and power supply management circuits. It also constitutes power device modules with self thermal-shutdown when packged with MOS power devices.