0.35m SiGe BiCMOS工艺Colpitts振荡器

Colpitts VCO in 0.35 μm SiGe BiCMOS Technology

应用标准0.35μm SiGeBiCMOS工艺设计一个Colpitts压控振荡器并流片。采用线性时变模型(LTV)分析振荡器的相位噪声。在3.3V电源电压下,压控振荡器的频率范围覆盖340～400MHz,10kHz频偏处相位噪声为-91dBc/Hz,输出功率-3dBm。相位噪声的测试结果与理论计算结果符合较好。芯片面积550μm×300μm。

A Colpitts voltage controlled oscillator （VCO） is designed and fabricated in a standard 0.35 μm SiGe BiCMOS technology. The linear time variant （LTV） model was used to analyze the phase noise. Under a supply voltage of 3.3 V, the frequency range of the VCO covers 340 - 400 MHz, the phase noise is -91 dBc/Hz at 10 kHz offset, and the output power is -3 dBm. The phase noise tested results are consistent with the theoretical calculating results. The chip size is 550μm× 300μm.