InGaAs MSM-PD肖特基势垒增强层的研究

THE RESEARCH OF InGaAs MSM-PD SCHOTTKY BARRIER ENHANCEMENT LAYER

通过在n型InGaAs光吸收层与金属接触间加入p型InGaAs势垒增强层的方法，来提高势垒高度，使其暗电流大为下降，并对其进行了理论和实验研究．

It is shown in this paper that the dark current of InGaAs MSM photodetectors can be greatly reduced with the structure of p-InGaAs Schottky barrier enhanccmcnt layer. Theoretical explanation is given and the lowest dark currents with the order of 10-11A are obtained in our experiments.