氢化非晶态硅薄膜的渗氢内耗实验研究

Experimental Study of Internal Friction of a-Si:H Films Charged with Hydrogen

用簧片振动法研究了GDa－Si：H薄膜气氛渗氢后的内耗．当测量频率为47．5Hz时，在－46℃处观察到氢致内耗峰，其激活能为0.30±0．05eV，弛豫时间因子为3．52×10-9s．

The internal friction of GD a-Si:H films charged with hydrogen in hydrogenatmosphere were measured by reed vibrating method. As a result, hydrogen related peakappears at 47.5Hz and -46℃ with activation energy (0.30 ± 0.05)eV and relaxation time3.52 × 10^(-9)s. Further research is needed to make the nature clear.