离子束缺陷工程与离子注入激活率的提高

ION BEAM DEFECT ENGINEERING AND INCREASED DOPANT ACTIVATION IN ION IMPLANTATION

研究了运用离子束缺陷工程提高离子注入Si中掺杂激活率的新方法．MeV高能Si注入被有效地用于防止缺陷（损伤）层对P激活的有害影响，大大提高了掺杂杂质的平均激活水平．

Increased dopant activation in ion-implanted Si is investigated by means of ion beam defer engineering. MeV Si+ implantation can be used to prevent deleterious effects of defect (damage) layers on P activation. This results in a greatly increase in the average activation level of dopant.