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SiO_2气凝胶薄膜的介电性能 被引量:3

Dielectric Properties of Silica Aerogel Films
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摘要 采用MIS结构测量了SiO2气凝胶薄膜的介电性能,其介电常数可低于2.5。验正了薄膜的介电常数与孔洞率或折射率的计算公式;探讨了SiO2气凝胶薄膜的介电色散行为和介电极化机制,指出了薄膜的低介电常数是其纳米多孔结构和疏水性能共同作用的结果。 The dielectric properties of silica aerogel films were measured by metal/insulator/semiconductor (MIS) structure. The dielectric constant can be reduced to below 2.5. An empirical formula on dielectric constant and refractive index of silica aerogel film was acquired. Molecule polarization theory is introduced to interpret partially dispersive low dielectric constant. It is find that the low dielectric constant of silica aerogel film is the results of its high porosity and hydrophobic character.
出处 《新技术新工艺》 2008年第6期91-93,共3页 New Technology & New Process
基金 武器装备预研项目(41312040307)
关键词 SiO2气凝胶薄膜 低介电常数 介电性能 折射率 silica aerogel film low dielectric constant dielectric properties refractive index
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参考文献8

  • 1Wu GM, Wang J, ShenJ, etal. A new method to control nano-porous structure of sol-gel-derived silica films and their properties [J]. Materials Research Bulletin, 2001, 36: 2127-2139.
  • 2Jung S B, Park S W, Yang J K, et al. Application of SiO2 aerogel film for interlayer dielectric on GaAs with a barrier of Si3N4 [J]. Thin Solid Films, 2004, 447-448: 580-585.
  • 3Thim G P, Oliveira M A S, Oliveira E D A, et al. Sob gel silica film preparation from aqueous solutions for corrosion protection [J]. J Non-Cryst Solids, 2000, 273: 124-128.
  • 4McDonagh C, Bowe P, Mongey K, et al. Characterization of porosity and sensor response times of sol-gel-derived thin films for oxygen sensor applications E [J]. J Non-Cryst Solids, 2002, 306; 138-148.
  • 5阮刚,肖夏,朱兆.低介电常数(lowk)介质在ULSI中的应用前景[J].电子学报,2000,28(11):84-87. 被引量:21
  • 6Sang H H, Kim J J, Park H H. Synthesis and characterization of low-dielectric aerogel films [J]. J Am Ceram Soc, 2000, 83(3): 533-540.
  • 7王娟,张长瑞,冯坚.三甲基氯硅烷对纳米多孔二氧化硅薄膜的修饰[J].物理化学学报,2004,20(12):1399-1403. 被引量:18
  • 8Mezza P, Phalippou J, Sempere R. Sol-gel derived porous silica films [J]. J Non-Cryst Solids, 1999, 243: 75-79.

二级参考文献15

  • 1Chang K M,IEEE Electron Device Lett,1999年,20卷,4期,185页
  • 2Batchalder T,Solid State Technology,1999年,29页
  • 3Qin S,IEEE Electron Device Letters,1998年,19卷,11期,420页
  • 4Lee,W. W. ;Ho,P. S. MRSBulletin,1997,22(10):19
  • 5Hyun,S. H. ;Kim,J. J. ;Park,H. H. J. Am. Cera. Soc. ,2000,83(3):533
  • 6Jain,A. ;Rogojevic,S. ;Ponoth,S. ;Agarwal,N. ;Matthew,I. ;Gill,W. N. ;Persans,P. ;Tamozawa,M. ;Plawsky,J. L. ;Simonyi,E. ThinSolidFilms,2001,398-399:513
  • 7Robert,D. M. Science,1999,286:421
  • 8Hasegawa,S. ;Tsukaoka,T. ;Inokuma,T. ;Kurata,Y. J. Non-Cryst. Solids,1998,240:154
  • 9Kim,K. ;Kwon,D. ;Lee,G. S. ThinSolidFilms,1998,332:369
  • 10Valentini,L. ;Braca,E. ;Kenny,J. M. ;Lozzi,L. ;Santucci,S. J. Non-Cryst. Solids,2001,291:153

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