摘要
针对典型的大功率发光二极管(LED)塑封器件,建立了3D模型,对器件内部从初始到正常工作状态过程中的温度分布和热应力分布进行了有限元分析模拟,并测试了实际器件表面特征点的温度变化。瞬态热分析的结果与实际的器件表面温度实测数据吻合较好。考虑到不同散热条件的影响,给出了该大功率LED塑封器件中热应力集中区域和该类器件适当的工作范围。
3D model of a typical high-power light-emitting diode （LED） package was established and finite element analysis was carried out to simulate the distributions of temperature and thermal stress in the LED device from initial power on to normal working status. The analysis was compared with the well-designed experiment and the simulation temperature was compliant to experiments at most typical points. The study demonstrated the specific values of temperature, strain and stress in the device with time increasing. The measures to reduce the failure high-power LED were discussed.
出处
《半导体光电》
EI
CAS
CSCD
北大核心
2008年第3期324-328,共5页
Semiconductor Optoelectronics
