期刊文献+

Liq/ITO结构表面与界面的AFM和XPS研究

Surface and Interface Investigation of Liq/ITO by Using AFM and XPS
下载PDF
导出
摘要 采用真空蒸发沉积的方法,在覆盖有ITO膜的玻璃基片上沉积一层Liq。利用原子力显微镜(AFM)对制备的Liq/ITO样品表面进行扫描,发现Liq粉末表现为岛状形态,其表面极不平整,存在大量裂缝和空隙,有许多针孔。用X射线光电子能谱(XPS)研究了Liq/ITO紧密接触的表面和界面电子状态。对样品In3d和Sn3d的电子状态分析也证实了ITO表面沉积Liq膜存在裂缝和针孔,这些裂缝和针孔吸附了空气中大量的气体分子;对C1s谱的分析发现,ITO膜表面存在一定的C污染;对N1s谱分析可知,界面处N原子与OI、n和Sn原子有相互作用,这将会影响Liq的发光颜色。 Liq was deposited on ITO coated glass by routine vacuum evaporation. The surface and interface of Liq/ITO were investigated by using atomic force microscopy(AFM) and X-ray photoelectron spectroscopy(XPS). The surface morphology of Liq was checked by AFM with an area of both in lateral and topographic force contact modes. XPS was introduced to study the interface electronic states of Liq/ITO. AFM results Liq grows as island shape, unwell- distributed and film quality of Liq on ITO was very rough with many cracks and pores. The analysis of surface of In3d and Sn3d spectrum by XPS provides additional evidence that the existence of cracks and pores in Liq, which can lead to heavy absorption of gas molecules. The spectrum of Cls indicates the existence of contaminated C atoms in the surface of ITO. The spectrum of Nls showed the interaction between N atoms and O, In and Sn atoms in the surface of ITO,which may affects the EL spectrum of Liq based OLEDs.
机构地区 兰州大学物理系
出处 《半导体光电》 EI CAS CSCD 北大核心 2008年第3期390-394,共5页 Semiconductor Optoelectronics
基金 国家自然科学基金项目(60676033) 甘肃省自然科学基金资助项目(3ZS041-A25-001)
关键词 原子力显微镜 X射线光电子能谱 Liq/ITO 表面和界面电子态 有机发光器件 atomic force microscopy X-ray photoelectron spectroscopy Liq/ITO electronic states of surface and interface organic light-emitting diodes(OLEDs)
  • 相关文献

参考文献8

  • 1Chrisoph S. Lithium-quinolate complexes as emitter and interface materials in organic light-emitting diodes [J].Chem. Mater.,2000,12:3012-3019.
  • 2郝玉英,王华,郝海涛,周禾丰,刘旭光,许并社.8-羟基喹啉锂的合成、表征及发光特性[J].发光学报,2004,25(4):419-424. 被引量:19
  • 3欧谷平,宋珍,桂文明,张福甲.PTCDA/ITO表面和界面的X射线光电子能谱分析[J].光谱学与光谱分析,2006,26(4):753-756. 被引量:5
  • 4Quoc T L,Avenda F M,Forsythe E M,et al. XPS and AFM investigation of stability mechanism of Alq3-based light-emitting devices[J]. J. Vac. Sci. Technol. , 1999.17A(4) :2 314-2 317.
  • 5Marsh J, Minel L, Barthes-Labrousse M G, et al. Interaction of epoxy model molecules with aluminum, anodized titanium and copper surfaces: an XPS study [J]. Appl. Surface Science, 1998,13:3:270-286.
  • 6Zheng D S, Li H R, Wang Y Y, et al Surface and interface analysis of tris-( 8-hydroxyquinoline ) aluminum and indium-tin oxide using atomic force microscopy ( AFM ) and X-ray photoelectron spectroscopy(XPS) [J]. Appl. Surf. Sci. , 2001,183: 165-172.
  • 7Wagner C D. Handbook of X-ray and ultra-violet photoelectron spectroscopy [M]. London Heyden&Sons, 1997. 283-286.
  • 8刘黎明,熊玉卿,郭云,李冠斌,杨得全.软X射线辐照引起的铟锡氧化物表面光化学反应[J].物理学报,2000,49(9):1883-1886. 被引量:2

二级参考文献22

  • 1田文晶,马於光,沈家骢.电注入发光聚合物的能带工程[J].高分子通报,1996(2):65-70. 被引量:4
  • 2杨志安,物理学报,1999年,48卷,1113页
  • 3Lin A W C,Anal Chem,1977年,49卷,1228页
  • 4Jan Hendrik Schφn, Christian Kloc. Appl. Phys, Lett. , 2001, 78(22):3538.
  • 5Narayan K S, Kumar N. Appl. Phys. Lett. , 2001, 79(12): 1891.
  • 6Dimitrakopoulos C D, Purushothaman S, et al. Science, 1999, 238: 822.
  • 7Haddon R C, Perel A S, Morris R C, et al. Appl. Phys. Lett. , 1995, 67(1): 121.
  • 8Tang C W, Van Slyke S A. Appl. Phys. Lett. , 1987, 51(12): 913.
  • 9Hiroyuki Fuchigami, Sachiko Tanimura, Yasushi Uehara, et al. Jpn. J. Appl. Phys., 1995, 34: 3852.
  • 10ZHANGFu-jia etal(张福甲 ).半导体光子学及技术,1997,16(4):248-248.

共引文献23

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部