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氢化后ZnO发光性质的变化

Changes in Luminescence Characteristics of ZnO Crystals after Hydrogenation
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摘要 通过低温光致发光(PL)谱研究氢化对ZnO发光性质的影响。氢通过一个直流等离子体发生装置引入到ZnO晶体。研究发现氢的引入影响了束缚激子的相对发光强度,特别是I4峰(3.363eV)的强度增加和3.366eV峰出现。比较未氢化样品,氢化样品PL谱显示不同的温度依赖。 The influence of hydrogenation on the luminescence characteristics of ZnO was investigated by low temperature photoluminescence （PL）. Hydrogen was incorporated into the ZnO crystals from a remote de plasma. It is found that hydrogen incorporation influences on the relative luminescence intensities of bound excitons, in particular the intensity of I4 （ 3. 363 eV） is enhanced and a emission peaked at 3. 366 eV appears. Hydrogenated ZnO samples show a different temperature dependence of PL spectra compared with virgin ZnO samples.
作者 张源涛 马艳 张宝林 杜国同
机构地区 吉林大学电子科学与工程学院集成光电子学国家重点联合实验室吉林大学实验区
出处 《发光学报》 EI CAS CSCD 北大核心 2008年第3期447-450,共4页 Chinese Journal of Luminescence
基金 国家自然科学基金资助项目(50532080 60676040 60576043)
关键词 氧化锌 氢化 退火 光致发光光谱 ZnO hydrogenation anneal PL spectrum
分类号 O472.3 [理学—半导体物理] O482.31 [理学—固体物理]
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参考文献16

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发光学报
2008年 第3期

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