氮掺杂氧化锌薄膜的光电特性

Optical and Electrical Properties of N-doped ZnO

采用气体反应电子束蒸发法，氨气氛下在玻璃上沉积了氮掺杂氧化锌（ZnO）薄膜。AFM观察发现氨气氛下生长的氮掺杂氧化锌薄膜表面比未掺杂样品的粗糙度略高，且随氨气压的增加粗糙度也随之增加，这可能与氨气氛对ZnO生长表面的轻微腐蚀作用有关，但表面依然比较平整。XRD分析显示，（0002）衍射峰位没有发生移动，但是氮掺杂后衍射峰的线宽比未掺杂样品稍有增加，衍射峰的半峰全宽由非掺杂ZnO的0．261°增加到0．427°。氧化锌掺氮后电阻率提高了4-7个数量级，达到了降低ZnO中电子浓度的目的。

ZnO was deposited on glass under NH3 gas ambience using electronic beam evaporation. AFM measurements indicate that the roughness of N-doped ZnO is a little bit higher than undoped ZnO, and it in- creases as the pressure of NH3 rises. However, the ZnO surface remains smooth. XRD measurement shows that the （0002） diffraction peaks remain constant for the different N-doped samples. The width of diffraction peak of N doped ZnO is 0.427°, which is a slightly broader than 0.261°of undoped ZnO. The resistivity of N- doped ZnO increases 4 to 7 times in magnitudes, which indicates the realization of reducing electronic concentration in ZnO films.