摘要
采用分子束外延技术（ＭＢＥ）生长了ＧａＡｓ／ＡｌＧａＡｓ单量子阱和多量子阱材料．采用ＧａＡｓ／ＡｌＧａＡｓ超晶格缓冲层掩埋衬底缺陷，获得的量子阱结构材料被成功地用于制作量子阱激光器．波长为７７８ｎｍ的激光器，最低阈值电流为３０ｍＡ，室温下线性光功率大于２０ｍＷ．
A study of single and multiple quantum well material grown on GaAs by MBE was performed.We use GaAs/AlGaAs superlattice buffer layer in the structure to bury the defects of the substrate.The quantum well material obtained was used to make quantum well lasers.In the room temperature,the lowest threshold current for 778nm lasers is 30mA,the liner output power is greater than 20mW.
基金
山东省科委资助
关键词
分子束外延
超晶格半导体
量子阱材料
Molecular beam epitaxy
Quantum
Superlattice semiconductors
