摘要
本文通过分析A面(11-20)ZnO薄膜的低温PL(光致发光)光谱偏振特性来研究ZnO光致发光谱中杂质峰的来源。低温(4 K)下观察到476、479 nm两处新的杂质峰以及390 nm处激子峰,根据两个杂质峰的偏振特性,初步判定476nm峰来源于氧空位能级到价带轻空穴的跃迁,479 nm峰来源于氧空位价带重空穴的跃迁。
Photoluminescence polarization on （11 -20） ZnO film has been studied at 4 K to explore the source of impurities. Two new PL peaks of impurities at 476,479 nm and intrinsic emission at 390 nm have been observed. And the two impurities peaks may correspond to the electron transition from deep oxygen vacancy level to the light hole and heavy hole of the valance band respectively according to their polarization characteristics.
出处
《光散射学报》
2008年第2期186-189,共4页
The Journal of Light Scattering
关键词
偏振PL谱
非极性面
杂质
Photolurninescence polarization
Non-polarized plane
Impurities
