甚高频对微晶硅薄膜微观结构的影响(英文)

Influence of Ultra High Frequency on Microcrystalline Silicon Growth

系统研究了射频和甚高频下沉积微晶硅薄膜时沉积参数对薄膜质量的影响,并优化了沉积参数.在相同的沉积条件下,甚高频沉积速度明显大于射频沉积速度,并且制备出的太阳能电池效率同样高于射频沉积.一般情况下,当沉积速率提高时,沉积薄膜中存在大量悬挂键和Si-2H键等缺陷,会大大降低材料的光电性能,同样也会降低太阳能电池的效率.在保证材料的光电性能的前提下提高沉积速度,沉积参数需要优化.在系列优化沉积参数后,微晶硅沉积速率达到0.75nm/s,在该沉积速率下,制备出的单结n-i-p结构的太阳能电池效率达到5.41%.

The deposition parameters of microcrystalline thin films by RF-PECVD and VHF-PECVD are systematically studied. Under similar conditions, the deposition rate of μc-Si： H thin films is higher by VHF-PECVD than by RF-PECVD. With deposition rate successively enhanced by VHF-PECVD, μc-Si：H solar cell efficiency is also improved. Generally, when deposition rate increases, dangling bonds related defects also increase, which is detrimental to solar cell performance. In order to increase deposition rate while keeping defects low, the deposition parameters are thoroughly investigated. Kept the deposition parameters as 0.75 nm/s, μc-Si：H solar cells are also fabricated and an initial efficiency of 5.41% is achieved.