摘要
制备了AlF3-MgF2-SiO2系低温共烧氧氟玻璃陶瓷材料,用XRD、SEM和阻抗分析仪等分析其烧结特性、显微结构、介电性能以及与Ag电极浆料共烧等性能。结果表明:该材料可以在900℃烧结致密化,烧成后的样品具有低的介电常数(6.2)和介质损耗(<0.002)、较低的热膨胀系数(7.4×10–6/K)、较高的弯曲强度(220 MPa)和热导率[2.4 W/(m.K)],能够与Ag电极浆料共烧,是一种很有应用前景的低温共烧陶瓷基板和无源集成介质材料。
The AlF3-MgF2-SiO2 low temperature co-fired oxyfluoride glass-ceramic system was prepared, and the sintering behavior, microstructure, dielectric properties and co-fired property with Ag electrode paste were studied by XRD. SEM and impedance analytic meter etc. The results show that the oxyfluoride glass-ceramic material can be sintered at 900℃ with relative low dielectric constant （6.2）, low dielectric loss （〈0.002）, low thermal expansion coefficient （7.4×10^4/K）, high bending strength （220 MPa） and high thermal conductivity 2.4 [W/（m · K）], the ceramics could be co-fired with silver electrode paste well. It is promising as a candidate of new dielectric material for LTCC substrate or passive integration.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2008年第6期15-17,共3页
Electronic Components And Materials
基金
国家自然科学基金资助项目(No.50425204No.50621201No.10774087)
关键词
无机非金属材料
低温共烧陶瓷
氧氟玻璃
玻璃陶瓷
non-metallic inorganic material
low temperature co-fired ceramic
oxyfluoride glass
glass-ceramic
