期刊文献+

锆钛酸钡掺杂改性研究进展 被引量:10

Research progress of doping modification for barium zirconate titanate
下载PDF
导出
摘要 综述了锆钛酸钡(BaZrxTi1–xO3,简称BZT)材料的掺杂种类以及掺杂对晶粒尺寸、相变温度、介电非线性和介电弛豫的影响等方面的最新研究进展,提出了研究中在掺杂与结构等方面需要解决的一些问题。 The latest progress on the categories of dopants and the dopant effects on grain size, Curie temperature, dielectric nonlinearity, dielectric loss and relaxor behavior of barium zirconate titanate (BaZrxTi1-xO3, abbreviated as BZT) were reviewed. Some problems on the research of doping of BZT materials were outlined.
出处 《电子元件与材料》 CAS CSCD 北大核心 2008年第6期30-33,共4页 Electronic Components And Materials
基金 中国博士后科学基金资助项目(No.20070410774) 重庆市自然科学基金资助项目(No.CSTC2007BB4212) 重庆市教育委员会科学技术研究资助项目(No.KJ071401,KJ081411)
关键词 电子技术 锆钛酸钡 综述 掺杂 性能 electron technology barium zirconate titanate review doping property
  • 相关文献

参考文献25

  • 1Razak K A,Asadov A,Yoo J,et al.Structural and dielectric properties of barium strontium titanate produced by high temperature hydrothermal method[J].J Alloys Compd,2008,449:19-23.
  • 2Venkata S K,Sudheendran K,Ghanashyam K M,et al.Structural,optical and microwave characteristics of sol-gel derived barium strontium titanate thin films[J].Mater Chem Phy,2007,105:426-432.
  • 3Ricardo J Z,Paul C M,John D B,et al.Relaxorlike dielectric behavior in Ba0.7Sr0.3O3 thin films[J].J Appl Phy,2007,101(6):066104.
  • 4Choi W S,Jang B S,Lim D G,et al.Characterization of Ba(Zr0.2Ti0.8)O3 thin films deposited by RF-magnetron sputtering[J].J Cryst Growth,2002,237-239(1):438-442.
  • 5Tang X G,Liu Q X,Jiang Y P,et al.Enhanced dielectric properties of highly (100)-oriented Ba(Zr,Ti)O3 thin films grown on La0.7Sr0.3MnO3 bottom layer[J].J Appl Phy,2006,100(11):114105.
  • 6Jiang X P,Zeng M,Chan H L W,et al.Relaxor behaviors and tunability in BaZr(0.35)Ti(0.65)O3 ceramics[J].Mater Sci Eng A,2006,(438-440):198-201.
  • 7符春林,蔡苇,潘复生.锆钛酸钡(BZT)铁电材料研究进展[J].电子元件与材料,2007,26(4):1-4. 被引量:9
  • 8Chou X J,Zhai J W,Jiang H T,et al.Dielectric properties and relaxor behavior of rare-earth(La,Sm,Eu,Dy,Y) substituted barium zirconium titanate ceramics[J].J Appl Phys,2007,102(8):084106.
  • 9Choi W S,Yi J,Hong B.The effect of cerium doping in barium zirconate titanate thin films deposited by rf magnetron sputtering system[J].Mater Sci Eng B,2004(109):146-151.
  • 10Tang X G,Chan H L.Effect of grain size on the electrical properties of (Ba,Ca)(Zr,Ti)O3 relaxor ferroelectric ceramics[J].J Appl Phys,2005,97(3):034109.

二级参考文献24

  • 1钟维烈.铁电物理学[M].北京:科学出版社,2000.
  • 2Ghosh D,Laughlin B,Nath J,et al.Tunable high-quality-factor interdigitated (Ba,Sr)TiO3 capacitors fabricated on low-cost substrates with copper metallization[J].Thin Solid Films,2006,496(2):669-673.
  • 3KumarA,ManavalanSG.CharacterizationofbariumstrontiumtitanatethinfilmsfortunablemicrowaveandDRAMapplications[J].SurfCoatTech,2005,198(1-3):406-413.
  • 4Choi W S,Yi J,Hong B,et al.The effect of cerium doping in barium zirconium titanate thin films deposited by rf magnetron sputtering system[J].Mater Sci Eng B,2004,109(1-3):146-151.
  • 5Wu T B,Wu C M,Chen M L.Highly insulative barium zirconium-titanate thin films deposited by rf magnetron sputtering for dynamic random access memory applications[J].Appl Phys Lett,1996,69(18):2659-2661.
  • 6Xu J,Menesklou W,Iverstiffee E.Annealing effects on structural and dielectric properties of tunable BZT thin films[J].J Electroceram,2004,13(1-3):229-233.
  • 7Yu Z,Guo R,Bhalla A S,et al.Orientation dependence of the ferroelectric and piezoelectric behavior of Ba(Ti1-xZrx)O3 single crystals[J].Appl Phys Lett,2000,77(10):1535-1537.
  • 8Dixit A,Majumder S B,Savvinov A,et al.Investigations on the sol-gel-derived barium zirconium titanate thin films[J].Mater Lett,2002,56(6):933-940.
  • 9Zhai J,Yao X,Chen H.Structural and dielectric properties of Ba0.85Sr0.15(Zr0.18Ti0.85)O3 thin films grown by a sol-gel process[J].Ceram Int,2004,30(7):1237-1240.
  • 10YuZ,GuoR,BhallaAS.DielectricbehaviorofBa(Ti1-xZrx)O3singlecrystals[J].JApplPhys,2000,88(1):410-415.

共引文献8

同被引文献106

引证文献10

二级引证文献30

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部