摘要
采用射频-等离子体辅助化学气相沉积(RF-PECVD)法在硅片、玻璃上生长类金刚石薄膜。通过Raman光谱、AFM等测试手段,研究不同的生长工艺条件下类金刚石薄膜的性质的变化。实验表明,RF-PECVD生长DLC膜,在上方电极处以及较低功率下可获得较高sp3含量的薄膜。
Diamond-like carbon (DLC) film samples were grown on silicon and glass by RF-PECVD with different conditions. Raman and AFM measurements were carried out to characterize these samples. Data analysis shows that DLC films grown on the top electrode and with low power have better qualities.
出处
《光谱实验室》
CAS
CSCD
2008年第3期462-464,共3页
Chinese Journal of Spectroscopy Laboratory