两种低压高速BiCMOS开关电流存储器

Two Kinds of Low-Voltage and High-Speed BiCMOS Switched-Current Memory

为了提高数字通信电路的速度，设计了两种BiCMOS开关电流存储器。设计过程中在电路的关键部位配置有限的双极型晶体管（BJT），但在电路的主体部分则设置MOS器件。推导出了存储电路的传输延迟时间估算式，优选了元器件参数，并采取了提速措施。进行了仿真试验和硬件电路实验。结果表明，所设计的两种开关电流存储器在低电源电压（VDD）为2．6～4．0V时，综合性能指标——时延．功耗积DP比CMOS存储电路AD585平均降低了约18．8pJ，特别适用于低压高速数字通信系统。

To improve the speed of digital communication circuits, two kinds of BiCMOS switchedcurrent memory were designed. A few of BJTs were set on the key parts, but MOS devices were put on the main circuit. Several delay time formulae were deduced and optimum parameters of the BJT and MOS devices were selected, and some measures of improving the speed were also adopted in the course of the design. The related analysis, simulations and experiment results show that the designed BiCMOS memories work properly from 2.6 V to 4.0 V, and the delay-power product （DP） is reduced by an average of 18.8 pJ as compared with that of the conventional CMOS memory AD585. With these characteristics the designed memories are very suitable for low-voltage and high-speed digital communication system.