利用HRXRD和UV-Vis反射光谱确定AlGaN/GaN/Al2O3的结构与成分

Structure and Composition of AlGaN/GaN Determined by HRXRD and UV-Vis Reflection

结合紫外-可见光谱和高分辨XRD两种测试方法,无损、可靠地确定了AlGaN/GaN HEMT结构内各层的厚度、成分、应力等参数,解决了高分辨XRD无法同时确定成分与应力的难题。这两种方法的好处是样品不需经过特殊的处理,也不需进行切割、减薄等工艺,具有快速、无损、准确的特点,可以作为AlGaN/GaNHEMT器件的筛选工具,提高器件的成品率、降低生产成本。

AIGaN/GaN/Al2O3 HEMT structures were non-destructively characterized by the combination of UV-Vis spectra and High resolution X-ray diffraction. From this combination, thickness, composition, and strain in the individual layers in the HEMT structure can be uniquely determined. The merits of this combination including non-destructive, high reliability, and high efficiency, compared to other techniques such as TEM and SEM by which samples should be mechanically processed. It can be used as an online QC technique for the AlGaN/GaN HEMT device production to reduce the production cost and improve the quality of the HEMT device.